For over 50 years, advances and improvements in photolithography (semiconductor patterning) equipment and materials have allowed the semiconductor industry to produce ever more powerful, more power efficient, and more affordable electronic devices.
As part of the photolithography process, photoresists are photosensitive materials that physically record exposure patterns on a silicon wafer as imaged from a mask. Improvements in photolithography equipment have delivered progressively higher resolution images with every generation. To realize these improvements, photoresist performance must keep pace.
Since the early 1990’s all leading-edge commercial photoresists have been the offspring of the same foundational class of organic materials known as Chemically Amplified Resists (CAR). Now, however, as the semiconductor industry moves toward the next generation of imaging technology, Extreme Ultraviolet Lithography (EUVL), the performance requirements are exceeding CAR capabilities and the industry needs a new photoresist platform, one that is purpose-built and optimized specifically for EUVL.
Our core molecules are 5X smaller than conventional materials. These dense, robust building blocks enable crisp and accurate feature sizes below 10nm.
Our metal oxide-based materials absorb 4-5X more photons/volume than conventional photoresists making them well-suited for achieving sensitivity targets.
We put the “resist” back into photoresist! Inpria’s metal oxide materials provide at least 10X higher etch selectivity relative to conventional organic photoresists, resulting in a simpler manufacturing process.
Working closely with lithography equipment manufacturers, we have demonstrated that our materials are compatible with existing fab equipment.
Inpria photoresists are designed and manufactured specifically to contain the desired active metals and not introduce trace metals at undesirable levels.
Inpria was founded in 2007 as a spin-out from Oregon State University’s Department of Chemistry and the NSF-funded Center for Sustainable Materials Chemistry. Since then we’ve recruited a diverse team with decades of experience working at organizations such as Intel, HP, IMEC, SEMATECH, Kovio, Freeslate, Lawrence Berkeley National Labs, and Los Alamos National Labs.
By focusing on the emerging requirements, Inpria has developed the only purpose-built solution to support EUV lithography at the 7nm process node and beyond.
Jim LaCasse—Chairman & Director; former CEO, NexPlanar (acquired by Cabot Microelectronics)
Andrew Grenville—Director; CEO, Inpria Corporation
Greg Fleming—Director; Investment Director, ALIAD Venture Capital
Dong-Su Kim—Director; Vice President, Samsung Ventures
Chris Progler—Director; CTO, Photronics
Sean Doyle—Observer; Intel Capital
Michael Falcon—Observer; Bandgap Ventures
Eric Johnson—Observer; President, JSR Micro
Tom Kingsley—Observer; Oregon Angel Fund
Taejoon Park—Observer; Applied Ventures
Chris Rosenthal—Observer; TOK
EUV Photoresist Pioneer Inpria raises $23.5 Million in Series B Funding Led by Samsung VenturesJuly 10, 2017
ASML informs shareholders, other investors and analysts about the company’s strategy outlook on EUV and other market trendsDecember 13, 2016
ASML Invests $1.9B in Next-Gen EUVDecember 13, 2016
We are always looking for excellent candidates to join our team!
Please send a note to firstname.lastname@example.org to learn more.